dmn32d4sdw document number: ds36023 rev. 2 - 2 1 of 6 www.diodes.com february 2015 ? diodes incorporated dm n32d4sdw new product advance information advanced information dual n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 30v 0.4 @ v gs = 10v 0.65a 0.7 @ v gs = 4.5v 0.52a description this mosfet is designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high-efficiency power management applicat ions. applications ? motor control ? power management functions ? dc-dc converters ? backlighting features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: sot363 ? case material: molded plastic, "green" molding com pound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? matte tin annealed over alloy42 leadframe. solderable per mil-std-202, method 208 ? weight: 0.006 grams (approximate) ordering information (note 4) part number case packaging dmn32d4sdw-7 sot363 3,000k/tape & reel DMN32D4SDW-13 sot363 10,000k/tape & reel notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http ?//www.diodes.com/products/packages.html marking information sot363 date code key year 2014 2015 2016 2017 201 8 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d esd protected top view e3 sot363 d1 s1 g1 gate protection diode d2 s2 g2 gate protection diode s 1 d 1 d 2 s 2 g 1 g 2 q1 n-channeal q2 n-channeal top view pin out s 1 d 1 d 2 s 2 g 1 g 2 n34 ym n34 ym n34 = product type marking code ym = date code marking y or y= year (ex: b = 2014) m = month (ex: 9 = september)
dmn32d4sdw document number: ds36023 rev. 2 - 2 2 of 6 www.diodes.com february 2015 ? diodes incorporated dm n32d4sdw new product advance information advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 6) v gs = 10v steady state t a = 25 c t a = 70 c i d 0.65 0.50 a maximum continuous body diode forward current (note 6) i s 0.4 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm 4 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 0.29 w thermal resistance, junction to ambient (note 5) steady state r ja 420 c/w total power dissipation (note 6) p d 0.35 w thermal resistance, junction to ambient (note 6) steady state r ja 360 c/w thermal resistance, junction to case r j c 128 c/w operating and storage temperature range t j, t stg -55 to 150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (n ote 7 ) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250 a zero gate voltage drain current i dss - - 1 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 10 a v gs = 20v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 0.8 - 1.6 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 0.2 0.4 v gs = 10v, i d = 0.25a - 0.3 0.7 v gs = 4.5v, i d = 0.25a - 0.4 1.0 v gs = 4.0v, i d = 0.25a - 0.9 - v gs = 2.5v, i d = 0.01a diode forward voltage v sd - 0.8 1.2 v v gs = 0v, i s = 0.23a dynamic characteristics (note 8 ) input capacitance c iss - 50 - pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 10 - pf reverse transfer capacitance c rss - 6.8 - pf gate resistance r g - 114 - v ds = v gs = 0v,f = 1.0mhz total gate charge (v gs = 4.5v) q g - 0.6 - nc v ds = 10v, i d = 250ma total gate charge (v gs = 10v) q g - 1.3 - nc gate-source charge q gs - 0.2 - nc gate-drain charge q gd - 0.1 - nc turn-on delay time t d(on) - 2.8 - ns v gs = 10v, v ds = 30v, i d = 100ma, r g = 10 turn-on rise time t r - 3.2 - ns turn-off delay time t d(off) - 26.3 - ns turn-off fall time t f - 22.8 - ns notes: 5. device mounted on fr-4 pcb, with minimum recommended pad layout. 6. device mounted on 1? x 1? fr-4 pcb with high cov erage 2oz. copper, single sided. 7. short duration pulse test used to minimize self- heating effect. 8. guaranteed by design. not subject to product tes ting.
dmn32d4sdw document number: ds36023 rev. 2 - 2 3 of 6 www.diodes.com february 2015 ? diodes incorporated dm n32d4sdw new product advance information advanced information 0.0 0.2 0.4 0.6 0.8 1.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristic v = 2.0v gs v = 2.5v gs v = 10v gs v = 5v gs v = 4.5v gs v = 4.0v gs v = 3.5v gs v = 3.0v gs 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5 i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristic t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a vds = 5.0v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 1 r , drain-source on-resistance ( ) ds(on) i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage v = 2.5v gs v = 10.0v gs v = 4.5v gs 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2 4 6 8 10 12 14 16 18 20 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) v , gate-source voltage (v) gs figure 4 typicaltransfer characteristic i = 250ma d i = 10ma d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1 vgs = 4.5v r , drain-source on-resistance ( ) ds(on) i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 r , d r a i n - s o u r c e o n - r e s i s t a n c e d s(on ) (normalized) t , junction temperature ( c) j figure 6 on-resistance variation with temperature v = 10.0v gs i = 500ma d v = 5.0v gs i = -300ma d
dmn32d4sdw document number: ds36023 rev. 2 - 2 4 of 6 www.diodes.com february 2015 ? diodes incorporated dm n32d4sdw new product advance information advanced information 0 0.1 0.2 0.3 0.4 0.5 -50 -25 0 25 50 75 100 125 150 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) t , junction temperature ( c) j figure 7 on-resistance variation with temperature v = 5v gs i = 300ma d v = 10v gs i = 500ma d 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s(th ) t , junction temperature ( c) j figure 8 gate threshold variation vs. ambient tempe rature i = 1ma d i = 250a d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 1 1.2 i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current t = 125c a t = 85c a t = 25c a t = 55c a t = 150c a 1 10 100 0 5 10 15 20 25 30 v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t f = 1mhz c iss c oss c rss 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v gate threshold voltage (v) gs q , total gate charge (nc) g figure 11 gate charge v = 10v ds i = 250ma d 0.001 0.01 0.1 1 10 0.1 1 10 100 r ds(on) limited - i , d r a i n c u r r e n t ( a ) d -v , drain-source voltage (v) ds figure 12 soa, safe operation area t = 150c j (m ax ) t = 25c a v = 10v gs single pulse dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w
dmn32d4sdw document number: ds36023 rev. 2 - 2 5 of 6 www.diodes.com february 2015 ? diodes incorporated dm n32d4sdw new product advance information advanced information 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance r (t) = r(t) * r ja ja r = 415c/w ja duty cycle, d = t1/ t2 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. sot363 dim min max typ a 0.10 0.30 0.25 b 1.15 1.35 1.30 c 2.00 2.20 2.10 d 0.65 typ f 0.40 0.45 0.425 h 1.80 2.20 2.15 j 0 0.10 0.05 k 0.90 1.00 1.00 l 0.25 0.40 0.30 m 0.10 0.22 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c1 1.9 c2 0.65 a m j l d b c h k f x z y c1 c2 c2 g
dmn32d4sdw document number: ds36023 rev. 2 - 2 6 of 6 www.diodes.com february 2015 ? diodes incorporated dm n32d4sdw new product advance information advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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